Samsung's 3nm mobile chips will offer greater performance and battery life

Last updated: May 15th, 2019 at 10:08 UTC+01:00

Samsung is showcasing its developments in advanced foundry technology yet again.. At the recently held Samsung Foundry Forum 2019 in Santa Clara, California, the visitor appear that its 3nm gate-all-around (GAA) process development is on track. It could be i of the largest manufacturing steps in many years, which will speed up innovations in next-gen technologies, such as bogus intelligence and autonomous driving.

3nm Procedure Blueprint Kit released

Compared to the 7nm process engineering, Samsung'south 3nm gate-accommodating (GAA) process, 3GAE, reduces the chip size by upwards to 45%, while consuming 50% less power and increasing efficiency by 35%. The process, which is a Multi-Bridge-Channel FET (MBCFET), Samsung'southward patented version of GAA, uses a vertically-stacked nanosheet architecture, enabling greater current per stack compared to a FinFET procedure.

Samsung had already shared version 0.1 of its process blueprint kit (PDK) with customers in April. Sharing the kit volition shorten the time-to-marketplace and improve design competitiveness for clients, the company said. Samsung has also taped out its test vehicle design and volition now focus on to improve its performance and power efficiency.

Samsung also shared its process technology roadmap at the Samsung Foundry Forum. It is planning to begin the mass production of 6nm procedure devices in the second half of this year. The 5nm FinFET process, which was adult in Apr, is expected to be completed by the stop of this year, with mass production scheduled for the outset half of 2020. The company also expects to complete the development of its 4nm process by the cease of this yr. Samsung hasn't gear up a time frame for the 3nm GAA process yet.

Source: https://www.sammobile.com/2019/05/15/samsungs-3nm-mobile-chips-greater-performance-battery-life/

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